? 2003 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 600 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 600 v v gs continuous 30 v v gsm transient 40 v i d25 t c = 25 c23a i dm t c = 25 c, pulse width limited by t jm 92 a i ar t c = 25 c23a e ar t c = 25 c30mj e as t c = 25 c 1.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 15 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 400 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c m d mounting torque 1.13/10 nm/lb.in. weight to-247 ad 6 g to-268 4 g to-247 ad (ixfh) g = gate d = drain s = source tab = drain (tab) ds99055(06/03) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 600 v v gs(th) v ds = v gs , i d = 4 ma 2.0 4.5 v i gss v gs = 30 v dc , v ds = 0 100 na i dss v ds = v dss t j = 25 c25 a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 10 v, i d = 0.5 i d25 0.32 ? pulse test, t 300 s, duty cycle d 2 % to-268 (ixft) case style (tab) g s hiperfet tm power mosfets q-class features z ixys advanced low gate charge process z international standard packages z low gate charge and capacitance - easier to drive - faster switching z low r ds (on) z unclamped inductive switching (uis) rated z molding epoxies meet ul 94 v-0 flammability classification advantages z easy to mount z space savings z high power density ixfh 23n60q v dss = 600 v ixft 23n60q i d25 = 23 a r ds(on) = 0.32 ? ? ? ? ? t rr 250ns n-channel enhancement mode avalanche rated, high dv/dt, low gate charge and capacitances preliminary data sheet
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 ixfh 23n60q ixft 23n60q symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 10 20 s c iss 3300 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 410 pf c rss 130 pf t d(on) 20 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 20 ns t d(off) r g = 1.5 ? (external) 45 ns t f 20 ns q g(on) 90 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 20 nc q gd 45 nc r thjc 0.31 k/w r thck (to-247) 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 23 a i sm repetitive; pulse width limited by t jm 92 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr 250 ns q rm i f = i s, -di/dt = 100 a/ s, v r = 100 v 0.85 c i rm 8a dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-247 ad outline terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 to-268 outline min recommended footprint
? 2003 ixys all rights reserved ixfh 23n60q ixft 23n60q fig. 2. extended output characteristics @ 25 deg. c 0 8 16 24 32 40 48 0 4 8 12162024 v ds - volts i d - amperes v gs = 1 0v 9v 8v 5v 6v 7v fig. 3. output characteristics @ 125 deg. c 0 2.5 5 7.5 10 12 . 5 15 17 . 5 20 03 69121518 v ds - volts i d - amperes v gs = 1 0v 9v 8v 7v 6v 5v fig. 1. output characteristics @ 25 deg. c 0 2.5 5 7.5 10 12 . 5 15 17 . 5 20 0 123 45678 v ds - volts i d - amperes v gs = 1 0v 9v 8v 7v 5v 6v fig. 4. r ds(on) normalized to i d25 value vs. junction temperature 0.5 1 1. 5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalize d i d = 23a i d = 1 1.5a v gs = 1 0v fig. 6. drain current vs. case t emperature 0 4 8 12 16 20 24 -50 -25 0 25 50 75 100 125 150 t c - degr ees centigr ade i d - amperes fig. 5. r ds(on) normalized to i d25 value vs. i d 0.5 1 1. 5 2 2.5 3 0 10 20304050 i d - amperes r ds(on) - normalize d t j = 1 25oc t j = 25oc v gs = 1 0v
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 ixfh 23n60q ixft 23n60q fig. 12. maxim um t ransient t herm al resistance 0.01 0.1 1 1 10 100 1000 pulse width - milliseconds r (th) j c - (oc/w) fig. 11. capacitance 10 0 10 0 0 10000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - p f c iss c oss c rss f = 1 m hz fig. 10. gate charge 0 2 4 6 8 10 0 20406080100 q g - nanocoulombs v gs - volts v ds = 300v i d = 1 1. 5 a i g = 1 0ma fig. 7. input admittance 0 5 10 15 20 25 30 35 40 3.544.555.566.57 v gs - volts i d - amperes t j = -40oc 25oc 1 25oc fig. 8. transconductance 0 6 12 18 24 30 36 42 0 10 2030405060 i d - amperes g fs - siemens t j = -40oc 25oc 1 25oc fig. 9. source current vs. source-to-drain voltage 0 10 20 30 40 50 60 0.3 0.5 0.7 0.9 1.1 v sd - volts i s - amperes t j = 1 25oc t j = 25oc
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